[GSAS-II] Regarding dislocation density calculation using crystallite size and microstrain

[Sorub]

Understood. Thank you so much
Regards
Sorb Y A

On Thu, Jun 8, 2023 at 7:44 AM Toby, Brian H. via GSAS-II <
gsas-ii at aps.anl.gov> wrote:

> For the list archives, Bob’s reply:
>
> Dear Sorb,
>
> GSAS-II reports microstrain values as 10^-6 strain. To give 10^-3 values,
> simply divide the GSAS-II values by 1000.
>
> Bob
>
> On Jun 8, 2023, at 12:55 AM, Sorub via GSAS-II <gsas-ii at aps.anl.gov>
> wrote:
>
> Dear Brian,
> I am a regular user of HPCAT beamline, APS.
>
> I want to calculate the dislocation density of silicon phases. I need to
> include both microstrain and domain size contributions in the equation.
>
> As we know,
>
> Dislocation density, ρd = (ρD * ρS)1/2
>
> Contribution from domain size (D), ρD = 3/D2
>
> Contribution from microstrain, ρS = k(εl)2/b2
>
> εl  is equivalent to the average microstrain
>
> In this equation, the microstrain calculations reported in the literature
> are of the order of 10-3
>
> In GSAS II, the microstrain is of the order of 106
>
> Do we need any conversion factor to calculate the microstrain to make it
> to the order of 10-3? Otherwise, we will overestimate the dislocation
> density
>
> The Williamson-Hall plot gives the microstrain of the Si ambient phase of
> the order 10-3
>
> Please provide your valuable suggestions to tackle this issue
>
> Thanks
>
> Regards
>
> Sorb Y A
>
> Iowa State University
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